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filingDate 2009-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103500700-B
titleOfInvention The manufacture method of semiconductor device
abstract In order to provide the simple manufacture method of the semiconductor device reducing the deterioration in characteristics due to static discharge, between the first insulator and the second insulator, seal multiple element layers with semiconductor integrated circuit and antenna; Formed include being formed on the first insulator surface the first conductive layer, the first insulator, element layer, the second insulator, the laminated construction of the second conductive layer that formed on the second insulator surface; And make the first insulator and the fusing of the second insulator, thus divided the making of laminated construction at least includes a semiconductor integrated circuit and an antenna.
priorityDate 2008-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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