| abstract |
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of formula I as follows: wherein R 1 and R 3 are independently selected from straight or branched C 3 -C 10 alkyl, straight or branched C 3 -C 10 alkenyl, straight or branched C 3 -C 10 alkynyl, C 1 -C 6 dialkylamino, electron-withdrawing group and C 6 -C 10 aryl; R 2 and R 4 are independently selected from hydrogen, straight chain or branched C 3 -C 10 alkyl, straight chain or branched Chain C 3 -C 10 alkenyl, straight or branched C 3 -C 10 alkynyl, C 1 -C 6 dialkylamino, electron-withdrawing group and C 6 -C 10 aryl; and wherein R 1 and Any, all or none of R 2 , R 3 and R 4 , R 1 and R 3 , or R 2 and R 4 are linked together to form a ring. |