http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103449734-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2013-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103449734-B |
| titleOfInvention | A kind of method preparing copper aluminium sulphur optoelectronic film |
| abstract | A preparation method for copper aluminium sulphur film, belong to optoelectronic film preparing technical field, the present invention obtains as follows, first cleans substrate, then by CuCln 2 2Hn 2 o, Al (NOn 3 )n 3 9Hn 2 o puts into solvent, adopts spin-coating method to obtain precursor thin-film on substrate, dries, what be placed with hydrazine hydrate and sublimed sulphur can in encloses container, precursor thin-film sample is not contacted with sublimed sulphur with hydrazine hydrate, finally carries out drying, obtain copper aluminium sulphur optoelectronic film.The present invention does not need high temperature high vacuum condition, and require low to plant and instrument, production cost is low, and production efficiency is high, easy handling.Gained copper aluminium sulphur optoelectronic film has good continuity and homogeneity, the composition and structure of the easy control objectives product of this novel process, for prepare high performance copper aluminium sulphur optoelectronic film provide a kind of cost low, industrialized preparation method can be realized. |
| priorityDate | 2013-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.