http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103426906-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103426906-B |
| titleOfInvention | Groove type power metal oxygen half field effect transistor and its manufacture method |
| abstract | The invention provides a kind of groove type power metal oxygen half field effect transistor, comprise base material, multiple the first groove and multiple the second groove; Base material has active region and withstand voltage zone, and described withstand voltage zone is around active region; Multiple the first grooves are positioned at active region; Multiple the second grooves are positioned at withstand voltage zone, and wherein said the second groove is stretched by active region epitaxial lateral overgrowth respectively; In addition, in described the second groove, there is insulating barrier and conductive material, and insulating barrier is positioned at the inner surface of the second groove. Accordingly, groove type power metal oxygen half field effect transistor of the present invention can, by the second groove is set in withstand voltage zone, promote breakdown voltage, and the space of simultaneously reducing withstand voltage design, reduces manufacturing cost. |
| priorityDate | 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.