http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103426813-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103426813-B |
| titleOfInvention | For carrying out the method etching reprocessing to low dielectric constant material layer |
| abstract | The invention provides a kind of method for carrying out etching reprocessing to low dielectric constant material layer, comprising: substrate is provided, provide the low dielectric constant material layer through etching with the first groove over the substrate; And use at least one in Ar and He to perform the first etching reprocessing, to make the surface densification of described low dielectric constant material layer as etching gas.The method can be repaired and be reduced the damage (such as C depletion layer) in low k dielectric, to improve the tolerance of low k dielectric to wet environment etc., and then improves the integrated electronic performance of semiconductor device.In addition, the method can also be compatible with traditional cmos manufacturing process, to reduce manufacturing cost. |
| priorityDate | 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.