http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103403859-B

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filingDate 2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103403859-B
titleOfInvention Semiconductor devices
abstract In the semiconductor device, active region (AR12) comprises: apply predetermined voltage the first extrinsic region (NI11), constitute an insulated-gate type field-effect transistor (MN12a) a pair conduction electrode second and the 3rd extrinsic region (NI13, NI14) and between the first and second extrinsic regions configuration at least one extrinsic region (NI12).Apply to make the voltage of the second and the 3rd electrically conducting between extrinsic region to the gate electrode (G13) in the second and the 3rd configuration between extrinsic region.Between the first and second extrinsic regions, whole gate electrode (G11, G12) of configuration becomes the structure being always electrically connected with the first extrinsic region (NI11).Between the first and second extrinsic regions, whole extrinsic region (NI12) of configuration maintains floating state from the first and second extrinsic region electrical separation.
priorityDate 2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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