| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-04 |
| filingDate |
2012-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79465538fdad1e5155869f351d42a1cc |
| publicationDate |
2013-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-103403847-A |
| titleOfInvention |
Silicon nitride film deposition method, organic electronic device manufacturing method, and silicon nitride film deposition device |
| abstract |
A silicon nitride film deposition method for depositing a silicon nitride film on a substrate housed in a processing vessel, wherein a processing gas containing a silane gas, a nitrogen gas and a hydrogen gas is supplied to the processing vessel, plasma is generated by exciting the processing gas, and a silicon nitride film is deposited on the substrate by means of plasma processing with said plasma. The silicon nitride film is used as a sealing film of an organic electronic device. During the plasma processing with said plasma, the pressure inside the processing vessel is maintained between 20-60Pa. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107507774-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110408909-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107275507-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109468613-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107507774-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109952632-A |
| priorityDate |
2011-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |