http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103397354-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38 |
filingDate | 2013-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2016-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2016-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-103397354-B |
titleOfInvention | A kind of additive in cavity after reducing silicon through hole technology copper facing annealing |
abstract | The invention discloses a kind of additive in cavity after reducing silicon through hole technology copper facing annealing, wherein, this additive comprise by mass percentage 0.05 1% the different quaternary ammoniated polymine of molecular weight and derivant in one or more, and the Polyethylene Glycol that mean molecule quantity is 200 20000 of 1 10%.Additive coordinates copper methanesulfonate system plating solution to use.In copper methanesulfonate system plating solution, meter comprises this additive of 1 5ml/L by volume.Copper methanesulfonate system plating solution comprises copper ion 50 110g/L, pyrovinic acid 5 50g/L, chloride ion 20 80mg/L based on mass volume ratio.Electroplate liquid also comprises the accelerator counting 0.5 5ml/L by volume, the inhibitor of 5 20ml/L and the leveling agent of 5 10ml/L.The additive in cavity after reducing silicon through hole technology copper facing annealing that the present invention provides, it is possible to the problem of Microfocus X-ray tube between crystal boundary after solution electro-coppering high annealing. |
priorityDate | 2013-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.