http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103390692-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2013-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103390692-B |
| titleOfInvention | A kind of method preparing copper indium tellurium thin films |
| abstract | Prepare a preparation method for copper indium tellurium thin films material, belong to optoelectronic film preparing technical field, the present invention obtains as follows, first cleans glass substrate, then by CuCln 2 2Hn 2 o, InCln 3 4Hn 2 o, TeOn 2 put into solvent, and adjusted to ph, precursor thin-film is obtained on the glass sheet with spin-coating method, dry, what be placed with hydrazine hydrate can closed container, precursor thin-film sample is not contacted with hydrazine, the closed container that precursor thin-film sample is housed is carried out heat rear taking-up sample and carry out drying, obtain copper indium tellurium optoelectronic film.The present invention does not need high temperature high vacuum condition, and require low to instrument and equipment, production cost is low, and production efficiency is high, is easy to operation.Gained copper indium tellurium optoelectronic film has good continuity and uniformity, this new technology for preparation high performance copper indium tellurium optoelectronic film provide a kind of cost low, can industrialized production method be realized. |
| priorityDate | 2013-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.