http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103367246-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 |
| filingDate | 2013-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103367246-B |
| titleOfInvention | Improvement system and corresponding manufacturing process for the electrical testing of silicon hole (TSV) |
| abstract | Some embodiments of the present invention are related to the improvement system and corresponding manufacturing process of the electrical testing for silicon hole.A kind of technique for manufacture system, the system is used for the electrical testing of the through hole to passing through the substrate of semi-conducting material to extend in vertical direction, integrated electrical test circuit is to realize detection through at least one electrical parameter of the through hole of microelectronics buried structure in the body for the technical thinking, and the microelectronics buried structure limits the power path buried between end towards outside electrical connecting element and through hole；Integrated step design provides groove and doping buried region is formed at the bottom of groove, and with the doping opposite with the doping of substrate to form semiconductor junction, power path is limited when its forward bias；Specifically, semiconductor junction has the junction area of the surface area on the horizontal plane crosscutting with vertical direction less than conductive region, in this way the reverse saturation current with reduction. |
| priorityDate | 2012-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.