http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103367135-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 2013-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103367135-B |
| titleOfInvention | Between gate stack Formation period in the dielectric layer of high dielectric gate pole annealing point defect |
| abstract | This disclosure to relate between gate stack Formation period annealing point defect in the dielectric layer of high dielectric gate pole, substantially improves the technology of the reliability of the semiconductor device having high dielectric constant gate dielectric layer for by annealing point defect between gate stack Formation period.Be disclosed in a demonstration methods herein and comprise the following step: perform the circulation of multiple deposition of material to form dielectric layer with high dielectric constant above semiconductor material layer, and during at least one in the circulation of the plurality of deposition of material, passivating material is introduced the gaseous precursor being used for being formed this dielectric layer with high dielectric constant. |
| priorityDate | 2012-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.