| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d303d13f63de0914af89cb970cff69e9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-403 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
2012-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_035de93391d4267ed90b8463bdd37501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d661590aa1ac1cf791bbb93c12d00b0 |
| publicationDate |
2013-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-103348464-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A conventional DRAM needs to be refreshed at an interval of several tens of milliseconds to hold data, which results in large power consumption. In addition, a transistor therein is frequently turned on and off; thus, deterioration of the transistor is also a problem. These problems become significant as the memory capacity increases and transistor miniaturization advances. A transistor is provided which includes an oxide semiconductor and has a trench structure including a trench for a gate electrode and a trench for element isolation. Even when the distance between a source electrode and a drain electrode is decreased, the occurrence of a short-channel effect can be suppressed by setting the depth of the trench for the gate electrode as appropriate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112490246-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108807177-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108807177-A |
| priorityDate |
2011-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |