http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103325686-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5fbc18c46a10cad08eebce6b92615d08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2013-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16466f2679786688a7adbb5baa35e918 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a148376aa283121b06c6bad5f33384fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_477222d604ba8b5531321cc1b8a0ce1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_003a057f29fc8729783ac55b7cc4f36a |
| publicationDate | 2015-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103325686-B |
| titleOfInvention | Method for preparing diamond base FET device with T-similar-type grid shelter autocollimation technology |
| abstract | The invention discloses a method for preparing a diamond base FET device with the T-similar-type grid shelter autocollimation technology, and relates to the technical field of methods for manufacturing semiconductor devices. The method comprises the step of forming a high-resisting diamond layer on a high temperature resistance substrate, the step of forming a conducting channel in the high-resisting diamond layer, the step of covering the surface of the high-resisting diamond layer with a metal mask layer, the step of photoetching a table-board, the step of removing a metal mask outside the table-board area through corrosive liquid, the step of forming grids on the metal mask in a photoetching mode, the step of removing the metal mask in the middle of a source leaking area through the corrosive liquid and forming source leakage, the step of manufacturing the T-similar-type grids in the corrosion area, the step of oxidizing or nitriding the outer sides of metal grids and forming a dielectric layer, and the step of enabling the T-similar-type grids to serve as a shield. According to the method, the T-similar-type grid shelter autocollimation technology is adopted, the distance between a grid source position and a grid leakage position is effectively shortened and is basically equal to the grid length, and the grid source resistance and grid leak resistance are reduced. |
| priorityDate | 2013-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.