http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103314480-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-20 |
| filingDate | 2012-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103314480-B |
| titleOfInvention | Dssc |
| abstract | The invention provides and a kind ofly shorten work electrode and to the distance between electrode, the DSSC with excellent light transfer characteristic.DSSC of the present invention comprises the conductive board (5) having and can pass through light and the work electrode (1) being arranged on the oxide semiconductor porous layer (6) on conductive board; With the oxide semiconductor porous layer of work electrode arrange in opposite directions to electrode (2); Be supported on the photosensitive dye on the oxide semiconductor porous layer of work electrode; Be configured in work electrode and to the electrolyte (4) between electrode, wherein, form the average grain diameter of the semiconductor particle entirety of oxide semiconductor porous layer (6) at below 100nm, electrolyte (4) is containing inorganic particulate (4a) and by inorganic particulate (4a) gelation, and the reflectivity of the luminance factor oxide semiconductor porous layer (6) of electrolyte (4) is large. |
| priorityDate | 2011-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.