http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103311433-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d0a3d10ed9477633fd2c07c6da61dc49 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2012-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f802771b6be504e976db10417834aef http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4caa17a485e038c2741c927cb93e735f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1c4b2ba5e6750cdb725ed1c46719514 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae06c84451da2d535117d7ef3459a933 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43104c0508df98c0cc90727459b3db68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef0b77c466e1a11853b8be68c8fe033b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fc28bd64ac25d3288ae75aa2503ef78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29b7b36f8a4b593f73a0fc651ed16e96 |
| publicationDate | 2015-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103311433-B |
| titleOfInvention | Manufacturing method of resistive random access memory |
| abstract | Disclosed is a manufacturing method of a resistive random access memory. The method comprises the steps of: forming a first electrode; forming a resistive function layer on the first electrode, wherein the resistive function layer includes at least one layer of first binary metallic oxide and at least one layer of second binary metallic oxide, and the first binary metallic oxide and the second binary metallic oxide are alternately laminated; carrying out a thermal annealing process; and forming a second electrode on the resistive function layer. Metal ions of different metallic oxides are different, and through the annealing process, diffusion occurs at the interface of two metallic oxides, a compound dielectric intermedium is formed, and structural defects are formed, thus optimizing electrical properties of the resistive function layer and improving the uniformity of transformation parameters. |
| priorityDate | 2012-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.