http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103311313-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2013-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103311313-B |
| titleOfInvention | Oxide thin film transistor and preparation method thereof |
| abstract | The invention discloses an oxide thin film transistor and a preparation method thereof. The oxide thin film transistor is provided with a surface self-assembly monomolecular layer which is fixedly arranged on the exposed surface of an oxide semiconductor layer. The surface self-assembly monomolecular layer is obtained by processing the surface of the oxide semiconductor layer through organic solvents, inorganic solvents, alkane mercaptan and alkyl or phenyl substitution triethoxysilane. The preparation method comprises preparing the surface self-assembly monomolecular layer on the exposed surface of the oxide semiconductor layer through a method of spin coating, drop coating or soaking, and processing the surface of the oxide semiconductor layer through organic solvents, inorganic solvents, alkane mercaptan and alkyl or phenyl substitution triethoxysilane. The oxide thin film transistor has the advantage of good stability. The preparing method of the oxide thin film transistor has the advantages of simple process and low cost. |
| priorityDate | 2013-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.