http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103311279-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3247 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-36 |
| filingDate | 2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103311279-B |
| titleOfInvention | Semiconductor device and the method for manufacturing semiconductor device |
| abstract | A kind of method the invention discloses semiconductor device and for manufacturing semiconductor device.First semiconductor region of the first conduction type is formed from the semiconductor substrate doped with the first dopant and the second dopant.First dopant and the second dopant are different materials and also different from semiconductor substrate.First dopant is electroactive and triggers the doping of the first conduction type in semiconductor substrate, and triggers being decreased or increased for the lattice parameter of the first semiconductor region of pure undoped p.Second dopant can for electroactive, and can be with the first dopant identical doping type, trigger one of the following or both：The hardening of the first semiconductor region；Respectively, reduce if the first dopant triggers, then the lattice parameter increase of the first semiconductor region of pure undoped p；If the first dopant triggers increase, then the lattice parameter of the first semiconductor region of pure undoped p reduces. |
| priorityDate | 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.