http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103311271-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66727 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2012-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103311271-B |
| titleOfInvention | Charge compensation semiconductor device |
| abstract | The present invention relates to charge compensation semiconductor device. A kind of semiconductor device includes semiconductor body and the layout source metallization on the first surface with the first surface limiting vertical direction. In vertical cross section, semiconductor body farther includes: the drift region of the first conduction type; At least two compensatory zone of the second conduction type, each compensatory zone forms pn-junction with drift region and electrically connects with source metallization low-resistance; The drain region of the first conduction type, the maximum dopant concentration of drain region is higher than the maximum dopant concentration of drift region; And first the 3rd semiconductor layer of conduction type, be arranged between drift region and drain region and include floating field plate and formed with the 3rd semiconductor layer pn-junction the second conduction type floating semiconductor regions at least one. |
| priorityDate | 2012-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.