http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103311123-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103311123-B |
| titleOfInvention | Method, semi-conductor device manufacturing method |
| abstract | The present invention discloses a kind of method, semi-conductor device manufacturing method, comprising: form the 2nd group of hard mask layer on substrate; 2nd group of hard mask layer forms first group of hard mask layer; Photoetching/etch first group of hard mask layer, forms first group of lines; Taking first group of lines as mask, photoetching/etching the 2nd group of hard mask layer, forms the 2nd group of lines, and wherein the 2nd group of line thickness is less than first group of line thickness; Taking the 2nd group of lines as mask, etched substrate, forms fin sheet. According to the method, semi-conductor device manufacturing method of the present invention, adopt multiplet structure mask, shelter with twice side wall and etch graphically, thus obtain the Nano-structure being less than photolithography limitation size. Technique is simple, precision height, and compatible high. |
| priorityDate | 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.