http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103308772-B

Outgoing Links

Predicate Object
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-14
filingDate 2012-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103308772-B
titleOfInvention Semiconductor testing circuit and detection method
abstract A kind of semiconductor testing circuit and detection method, described testing circuit comprises: current input terminal and current output terminal; Two series circuits between described current input terminal and current output terminal, are connected in parallel between described two series circuits; Each series circuit comprises a MOS transistor to be detected and a reference MOS transistor; Wherein a series circuit is connected with current input terminal by MOS transistor to be detected, and another series circuit is connected with current input terminal by reference to MOS transistor; The channel region of described MOS transistor to be detected has effect of stress, and the described channel region with reference to MOS transistor does not have effect of stress.When detecting, electric current is applied between described current input terminal and current output terminal, by recording the voltage difference in described two series circuits between device to be detected and parametric device, obtain the impact that differently strained silicon technology treats the electrical parameter of detection means.
priorityDate 2012-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541

Total number of triples: 12.