http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103295895-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2013-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103295895-B |
| titleOfInvention | A kind of lithographic method improving self-aligned silicide barrier layer step effect |
| abstract | The invention provides a kind of lithographic method improving self-aligned silicide barrier layer step effect in semiconductor device layer, this self-aligned silicide barrier layer is type silicon oxide, comprise preliminary treatment and main etching two processes, preprocessing process comprises: form the plasma with isotropic etching ability; The plasma with isotropic etching ability is utilized to carry out selective etch to the top of the stepped area on self-aligned silicide barrier layer; Main etching process comprises: form the plasma with anisotropic etching ability; Utilize the plasma with anisotropic etching ability to the top of the stepped area on self-aligned silicide barrier layer, sidewall and bottom carry out near-synchronous etc. speed etching.Lithographic method of the present invention, effectively can remove the step effect on self-aligned silicide barrier layer, realize the uniform fold on self-aligned silicide barrier layer, to reduce the difficulty that successive process removes self-aligned silicide barrier layer. |
| priorityDate | 2013-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.