| abstract |
The invention provides do not use special device, high-density and the gan sintered compact of low oxygen amount or gan molding.According to the first embodiment, can obtain a kind of gan sintered compact, it is characterized in that, density is 2.5g/cmn 3 above and lower than 5.0g/cmn 3 , compare lower than 3% relative to the peak intensity in (002) face of gan based on the peak in (002) face of the gallium oxide of X-ray diffraction mensuration.According to the second embodiment, can obtain a kind of gallium and soak into gan molding, it is characterized in that, it comprises the gan phase and gallium phase that exist with the form of respective phase, and the mol ratio of Ga/ (Ga+N) is more than 55% and less than 80%. |