| abstract |
Illustrating that one has the compound substrate (1) of carrier (2) and useful layer (5), wherein said useful layer is fixed on described carrier (2) by dielectric articulamentum (3), and above and described carrier (2) comprises radiation transition material.Additionally, a kind of a kind of a kind of semiconductor chip (10), method for manufacturing compound substrate and method for manufacturing the semiconductor chip with compound substrate with such compound substrate is described. |