http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103261915-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49117 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01V5-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T3-08 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01V5-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T3-08 |
filingDate | 2011-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2016-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2016-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-103261915-B |
titleOfInvention | Use the neutron porosity log instrument of the neutron detector of micro-structural |
abstract | Neutron porosity measurement mechanism uses and is positioned at and the semiconductor detector of cavity at a distance of different distance, and this cavity is configured to hold neutron source.Each of these semiconductor detectors comprises (i) Semiconductor substrate (110), its doping is to form pn knot, and there is the microstructure being formed as the neutron reaction material (120) extended from the first surface in described Semiconductor substrate, and (ii) electrode (160,170), these electrodes one of them (160) contact with the first surface of Semiconductor substrate and another electrode (170) in this electrode contacts with the second surface of Semiconductor substrate, and second surface is relative with first surface.These electrodes are configured to obtain the electric signal that in Semiconductor substrate IT, the period of the day from 11 p.m. to 1 a.m occurs. |
priorityDate | 2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.