http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103258810-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_405ffed2325d9184f652cb87489e6415 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538 |
| filingDate | 2013-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbebac2915531cc3146b2eb22082ebaa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0d35d654905de6e1fc9de0646128802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40e4b9f0af0c47dd33c0f07b848773ed |
| publicationDate | 2015-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103258810-B |
| titleOfInvention | Method for reducing over electroplating on surface of wafer after through silicon via (TSV) is electroplated with copper |
| abstract | The invention relates to a method for reducing over electroplating on the surface of a wafer after a through silicon via (TSV) is electroplated with copper, and belongs to the technical field of wafer-level electro-coppering pore filling. According to the method, after the TSV is vertically etched and an insulation layer, a copper diffusion barrier layer and a copper seed layer are formed on the surface of the wafer in sequence, a special layer is further formed on the surface of the wafer and in the position of a port of the vertical TSV before an electroplating copper-filling process, the special layer is made of metal Ta, V, Ti, Al and Fe or non-metal TiN, TaN and AlN, and the height of the special layer in the port position of the vertical TSV is not larger than the sum of the thicknesses of the insulation layer, the copper diffusion barrier layer and the copper seed layer on the surface of the wafer. The method for reducing over electroplating on the surface of the wafer after the TSV is electroplated with copper is simple in process, is capable of effectively preventing copper from being deposited on the surface, relieves the burden of chemical mechanical polishing (CMP), and lowers the cost. |
| priorityDate | 2013-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.