http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103219352-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103219352-B |
| titleOfInvention | LED combination chip of array architecture and preparation method thereof |
| abstract | The invention provides a kind of LED combination chip with array architecture and preparation method thereof, this combined chip is comprised and being connected by array architecture wiring is some GaN base LED chips of one single core grain; Each GaN base LED chip comprises from top to bottom successively: epitaxial wafer, dielectric isolation layer, transparency conducting layer, P-type electrode and P type pad, N-type electrode and N-type pad and passivation layer.The present invention is the device that traditional GaN base light-emitting diode combines with IC circuit, and integrated by multiple traditional GaN base LED chip unit array, chip unit forms one single core grain, and the quantity of user's packaging and routing greatly reduces, and reduces encapsulation difficulty.Further, combined chip of the present invention, with the type of drive work of big current small voltage, is not only alleviated the stress because thermal mismatching and lattice mismatch cause, and is increased light extraction efficiency due to increasing of sidewall area, thus improves luminous efficiency. |
| priorityDate | 2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.