http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103208521-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103208521-B |
| titleOfInvention | HVMOS device and forming method thereof |
| abstract | A kind of device, including: a HVMOS device and the 2nd HVMOS device, each HVMOS device includes the gate electrode of semiconductor substrate, wherein, the gate electrode of the oneth HVMOS device and the 2nd HVMOS device is respectively provided with first grid length and second grid length, and second grid length is more than first grid length.Each in oneth HVMOS device and the 2nd HVMOS device includes respectively: p-type the first well region and N-shaped the second well region；And intrinsic region, contact between the first well region and the second well region and with the first well region and the second well region.The impurity concentration of the first well region and the second well region is higher than the impurity concentration of intrinsic region.The intrinsic region of the oneth HVMOS device and the intrinsic region of the 2nd HVMOS device are respectively provided with the first intrinsic region length and the second intrinsic region length, and wherein, the second intrinsic region length is more than the first intrinsic region length.Present invention also offers HVMOS device and forming method thereof. |
| priorityDate | 2012-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.