http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103198875-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_92c24a0736903ca49337f8e00f12056c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e3a3a35dde17bf832f2c3ab2ffbfa7b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-10 |
| filingDate | 2012-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ec2b7fe420288bbc6cd558492422757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b4e9c2a2998426322018d270832ac8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_640812989441406bc1e1cb698a6beca6 |
| publicationDate | 2013-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103198875-A |
| titleOfInvention | Preparation method of cadmium telluride thin film solar cell and graphite conductive paste used by cadmium telluride thin film solar cell |
| abstract | The invention relates to a preparation method of a cadmium telluride thin film solar cell and graphite conductive paste used by the cadmium telluride thin film solar cell. The preparation method includes that a cadmium telluride layer is formed and is characterized in that a side face of the cadmium telluride layer is covered with the graphite conductive paste with the thickness of 0.5-3 micrometers, after dried, the cadmium telluride layer is treated in a thermal mode for 5-60min at the temperature of 200-300 DEG C, the graphite conductive paste mainly comprises 10-75% of CuxS and 25-90% of filling material, wherein x is larger than or equal to 0.88 and smaller than or equal to 2, the particle size of the CuxS is smaller than or equal to 0.5 micrometer, the particle size of the filling material is 0.005-0.9 micrometer, and the filling material is graphite or/and black carbon. The conductive graphite paste mixed with copper sulfide (CuxS) is adopted as back contact layer material, thin film preparation can be carried out with simple methods such as coating, spraying and printing, deposition of the thin film in a chemical water bath and expensive vacuum equipment are not needed, and the preparation process of a back contact structure is rapid and efficient. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105720113-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105023966-A |
| priorityDate | 2012-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 76.