http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103191725-B

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filingDate 2013-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103191725-B
titleOfInvention BiVO4/Bi2WO6 composite semiconductor material as well as hydrothermal preparation method and application thereof
abstract The invention discloses a BiVO4/Bi2WO6 composite semiconductor material as well as a hydrothermal preparation method and an application thereof. The nominal composition of the BiVO4/Bi2WO6 composite semiconductor material is (1-x) BiVO4/xBi2WO6, wherein x is 5-95mol%. The composite semiconductor material prepared by the method has the advantages of good dispersity, controlled crystal structure and morphology, large special surface area and very good adsorption effect on organic dyestuff methylene blue, high visible-light response activity, good chemical stability and the like. The preparation method has the advantages of being simple in preparation technology, easy in obtaining of raw materials, low in energy consumption and environment-friendly and beneficial to mass production.
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