| abstract |
A kind of be provided with by silicon oxide region (4) around the first surface (1) at least one copper district (3) and second surface (1 ') between the method that engages, be included in first surface (1) and form with second surface (V) operation contacting front use plasma treatment first surface (1).Plasma is produced by source of the gas, and described source of the gas comprises the nitridizing agent for silica and the reducing agent for cupric oxide based on hydrogen.Source of the gas can comprise Nn 2 / NHn 3 and/or Nn 2 / Hn 2 admixture of gas, also or Nn 2 o/Hn 2 admixture of gas, goes back or ammonia, and then this ammonia is used as both nitridizing agent and reducing agent.So the plasma obtained from this source of the gas must comprise nitrogen and hydrogen, the strong bond between the first and second surfaces (1,1 ') can be provided thus in single operation. |