http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103178117-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103178117-B |
| titleOfInvention | Bipolar film transistor and manufacture method thereof |
| abstract | The invention discloses a kind of bipolar film transistor and manufacture method thereof, this thin-film transistor comprises: substrate; First semiconductor layer, is formed on substrate; Stacked source electrode and stacked drain electrode, formed on the first semiconductor layer; Stacked source electrode comprises the first stacked source electrode and the second source electrode, and stacked drain electrode comprises the first stacked drain electrode and the second drain electrode; Second semiconductor layer, conduction type is different from the first semiconductor layer, is formed in stacked source electrode and stacked drain electrode and between stacked source electrode and stacked drain electrode; First source electrode and the first drain electrode work function of material therefor and the conduction type of the first semiconductor layer match to reduce the potential barrier that electronics or hole are injected; Second source electrode and the second drain electrode work function of material therefor and the conduction type of the second semiconductor layer match to reduce the potential barrier that electronics or hole are injected; Also comprise: grid and gate insulation layer.Device provided by the invention and method solve electronics and the unbalanced problem of hole transport in ambipolar TFT. |
| priorityDate | 2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.