http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103168372-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-72 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| filingDate | 2011-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103168372-B |
| titleOfInvention | Combination of memory cells with resistive switching layers |
| abstract | A storage device in a three-dimensional read-write memory, including a storage unit. Each memory cell includes a resistive switched memory element (RSME) in series with a steering element. The RSME has first and second resistive switching layers on either side of the conductive intermediate layer and first and second electrodes across the RSME. Both the first resistive switch layer and the second resistive switch layer may have bipolar or unipolar switch characteristics. During the set or reset operation of the memory cell, ionic current flows in the resistive switching layer to facilitate the switching mechanism. Due to the scattering of the conductive interlayer, the flow of electrons which do not contribute to the switching mechanism is reduced in order to avoid damage to the steering element. Specific materials and combinations of materials for the different layers of the RSME are provided. |
| priorityDate | 2010-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.