http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103165628-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2011-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11a95b62010d4c58cb3ca9e01e4a9f61 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b41ce9709ff7b35c1816cb6b65153f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bba3d0a28e8d623f037ca1b7cec37715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fee47c782221be1c17f8a4f7bc24698 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97bcd96457035e5240bb6c7595fbf0b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b52a01da82d1761d52265a79f4abe1e |
| publicationDate | 2015-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103165628-B |
| titleOfInvention | Multifunctional exposure imaging method based on composite dielectric grating metal-oxide-semiconductor field-effect transistor (MOSFET) light-sensitive detector |
| abstract | Provided is a multifunctional exposure imaging method based on a composite dielectric grating metal-oxide-semiconductor field-effect transistor (MOSFET) light-sensitive detector. The exposure imaging method includes the steps that negative bias pulse Vb is added to a substrate, a forward voltage pulse Vp is added to one end of a source electrode or a drain electrode, the other end of the source electrode or the other end of the drain electrode is floated, or the source electrode and the drain electrode are respectively provided with one forward voltage pulse Vp, the source electrode and the drain electrode are additionally provided with a bias pulse larger than bias voltage of the substrate, meanwhile zero bias voltage or a forward bias pulse Vg is added to a control grid, and the substrate and a source and drain region generate a depletion layer. The number range of the Vg is 0-20V, the number range of the Vb is -20-0V, and the number range of the Vp is 0-10V. By means of adjustment of voltage, the detector can collect photoelectrons so that exposure imaging of the device is carried out. The multifunctional exposure imaging method has the advantages of having low-voltage operation, being free of dark current interference and accurate in imaging, detecting in low light, and being fast in imaging speed and the like. |
| priorityDate | 2011-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426098968 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327157 |
Total number of triples: 18.