http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103165515-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce0718b24472a1d54a16a6159d20d96 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2011-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_829729afc9ddfd6bc838d237d07537fd |
| publicationDate | 2015-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103165515-B |
| titleOfInvention | Manufacture method of semiconductor device |
| abstract | The invention discloses a manufacture method of a semiconductor device. The manufacture method comprises the steps: providing a semiconductor substrate; forming a barrier layer and a low K medium layer in sequence on the semiconductor substrate; conducting bombardment on the surface of the low K medium layer through oxygen plasma; forming a low-temperature oxide layer and a patterned photoresist layer on the low K medium layer in sequence; serving the photoresist layer as a masking, and etching the low-temperature oxide layer; removing the photoresist layer, serving the low-temperature oxide layer as a masking, etching the low K medium layer and the barrier layer until the low K medium layer and the barrier layer are exposed out of the semiconductor substrate, and forming a groove; and cleaning the formed semiconductor structure. The manufacture method of the semiconductor device can prevent an undercut phenomenon. |
| priorityDate | 2011-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.