http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103154313-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-503 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-42 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2011-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_034e63e0c5bea1534de8ac9723720a79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdbf9dbc2b87885e7edb5a8f172d403e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fdc61260a3bfc0f802fcf0d16d42e60 |
| publicationDate | 2015-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103154313-B |
| titleOfInvention | Film-formation device and film-formation method |
| abstract | Provided is a film-formation device that forms a gas-barrier layered film that exhibits bending resistance and sufficient gas-barrier performance. Said film-formation device has: a vacuum chamber that contains a substrate; a gas-supply device that supplies a film-forming gas to the vacuum chamber, said film-forming gas containing an organic metal compound from which a thin film will be formed and a reaction gas that reacts with said organic metal compound; a pair of electrodes arranged inside the vacuum chamber; a plasma-generation power supply that applies AC power to the pair of electrodes, thereby generating a plasma of the film-forming gas; and a control unit. The control unit controls the gas-supply device and/or the plasma-generation power supply, switching between: first reaction conditions under which the organic metal compound and the reaction gas react to produce a compound that contains a metallic or metalloid element from the organic metal compound and does not contain carbon; and second reaction conditions under which the organic metal compound and the reaction gas react to produce a carbon-containing compound that contains carbon, and a metallic or metalloid element, from the organic metal compound. |
| priorityDate | 2010-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.