http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103140439-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-186 |
| filingDate | 2011-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103140439-B |
| titleOfInvention | The method of temperature production Graphene, the directly method and graphene sheet of the Graphene of transfer same procedure |
| abstract | Method the present invention relates to be used to form Graphene in low temperature, is related to the method using the Graphene of same procedure for directly transfer, and be related to graphene sheet.Methods described for forming Graphene in low temperature includes gas of the supply containing carbon source to the layer of the metal onidiges for growing Graphene formed on substrate, and by inductively coupled plasma chemical vapor deposition（ICP‑CVD）Mode forms Graphene in 500 DEG C or lower of low temperature. |
| priorityDate | 2010-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.