http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103137490-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2011-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103137490-B |
| titleOfInvention | Semiconductor device and manufacture method thereof |
| abstract | Disclose a kind of semiconductor device and manufacture method thereof.The method utilizes solid phase epitaxy (SPE) technique to form source-drain area, thus easily can be applied to local source and drain isolated transistor.Make the amorphous semiconductor material crystallization at source-drain area place by annealing in process and shrink, thus introducing tensile stress at channel direction.In addition, compared with adopting the source-drain area of poly semiconductor, the resistivity of source-drain area formed according to the present invention is improved. |
| priorityDate | 2011-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.