http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103137415-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2012-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103137415-B |
| titleOfInvention | Semiconductor-fabricating device and semiconductor making method |
| abstract | The present invention provides a kind of semiconductor-fabricating device and semiconductor making method, it is possible to when etch process performs, and improves the etching selectivity of nitride film.In the semiconductor-fabricating device of the present invention, by difluoromethane CH outside processing chamber 2 F 2 , nitrogen N 2 And oxygen O 2 Gas produces plasma, is supplied in processing chamber by the plasma of generation.According to the present invention, it is not necessary to change source gas, by quantity delivered and the temperature of chuck of regulation oxygen, it is possible to silicon nitride film is adjusted to contrary with silicon nitride film relative to the relative size of the etching selectivity of polysilicon film relative to the etching selectivity of silicon oxide film. |
| priorityDate | 2011-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.