| abstract |
The present invention relates to semiconductor device, electronic device and method, semi-conductor device manufacturing method.Described semiconductor device comprises: connecting elements, and this connecting elements comprises the first weld pad be formed on the first type surface of connecting elements; Semiconductor chip, the circuit that this semiconductor chip comprises formation second weld pad on it forms surface, and this chip is arranged on connecting elements and makes circuit form surface towards first type surface; And solder projection, this solder projection connects the first weld pad and the second weld pad and is made up of the metal comprising Bi and Sn, wherein this block comprise be formed as near the second weld pad the first boundary layer, be formed as near the second interface layer of the first weld pad, the first zone line of any one be formed as in the boundary layer, and be formed as another and the second zone line be formed as near the first zone line in boundary layer; In the first zone line, Bi concentration is higher than Sn concentration; And in the second zone line, Sn concentration is higher than Bi concentration. |