http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103107100-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-50
filingDate 2012-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f20a92c5f18651f8a332614ef702cc56
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publicationDate 2013-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103107100-A
titleOfInvention Manufacturing method of power semiconductor device
abstract The invention provides the manufacturing method of a power semiconductor device, wherein the insulation property, the voltage resistance and the reliability of the power semiconductor device are improved. According to the technical scheme of the invention, the adhesiveness of silica gel (9) (served as protection materials) with an insulating substrate (1) printed with conductive patterns and a semiconductor chip (2) is improved by means of an oxygen plasma combining and surface treatment step (step 5) and silica gel pre-injecting and preheating step (step 6). In this way, the insulation property, the voltage resistance and the reliability of the power semiconductor device under a high-temperature environment can be improved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111033736-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110447098-B
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111162057-A
priorityDate 2011-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 29.