http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103094335-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2012-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103094335-B |
| titleOfInvention | High electron mobility transistor and forming method thereof |
| abstract | A kind of semiconductor structure comprises: the first III-V compound layer.Second III-V compound layer is arranged on above the first III-V compound layer, and the constituent of the second III-V compound layer is different from the constituent of the first III-V compound layer.Carrier channels is between the first III-V compound layer and the second III-V compound layer.Source feature and drain feature are arranged on above the second III-V compound layer.Gate electrode is arranged on the top of the second III-V compound layer between source feature and drain feature.Fluorine region is embedded in the second III-V compound layer below gate electrode.Gate dielectric is arranged on above the second III-V compound layer.Gate dielectric has fluorine section, and this fluorine section is positioned at the below at least partially of fluorine overlying regions and gate electrode.Present invention also offers High Electron Mobility Transistor and forming method thereof. |
| priorityDate | 2011-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.