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filingDate 2012-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103094290-B
titleOfInvention Adopt the imageing sensor trench isolations of conformal doping
abstract The invention provides a kind of semiconductor image sensor device.This image sensor devices comprises substrate.This image sensor devices comprises setting the first pixel in the substrate and the second pixel.First and second pixels are adjacent pixels.This image sensor devices comprises the isolation structure of setting in the substrate and between the first and second pixels.This image sensor devices comprises the doping isolating device of setting in the substrate and between the first and second pixels.This doping isolating device is conformally around isolation structure.Present invention also offers a kind of imageing sensor trench isolations adopting conformal doping.
priorityDate 2011-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.