http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103094189-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2011-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103094189-B |
| titleOfInvention | The formation method of silicon through hole |
| abstract | A formation method for silicon through hole, comprising: provide silicon substrate, described silicon substrate is formed with interlayer dielectric layer and runs through described interlayer dielectric layer and bottom is arranged in the through hole of silicon substrate; Form the stop-layer covering described via bottoms, sidewall and interlayer dielectric layer; To described filling through hole protective layer, described protective layer fills up through hole; The stop-layer of interlayer dielectric layer is covered, until remainder stop-layer described in planarization; Remove the protective layer in described through hole; Filled conductive material in described through hole; The electric conducting material in described remainder stop-layer and remainder stop-layer is removed, until expose interlayer dielectric layer by CMP.The formation method of silicon through hole of the present invention can improve the performance of formed silicon through hole. |
| priorityDate | 2011-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.