http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103081136-A

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filingDate 2012-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b89d01e368a697ed5572ea8498aefcdf
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publicationDate 2013-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103081136-A
titleOfInvention Nitride semiconductor light-emitting element
abstract This nitride semiconductor light-emitting element is provided with: a semiconductor laminate structure that contains an active layer (306) formed from a nitride semiconductor of which the primary surface is a semipolar surface or a nonpolar surface, and that has a rough surface (310) to which depressions and/or protrusions have been formed; an electrode (308) that covers the rough surface (310) side of the semiconductor laminate structure, and that reflects at least a portion of the light radiated from the active layer (306); and a birefringent substrate (304) that is disposed at the reverse side of the semiconductor laminate structure from the rough surface (310) and that transmits the light radiated from the active layer (306) and the light reflected by the electrode (308).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106935151-A
priorityDate 2011-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 28.