http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103078013-B

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filingDate 2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9e014c778d2098d96bd31c0ec6d4a99
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publicationDate 2015-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103078013-B
titleOfInvention Method for preparing bismuth vanadate/bismuth ferrite heterojunction film solar cells
abstract The invention relates to a method for preparing bismuth vanadate/bismuth ferrite heterojunction film solar cells on a glass substrate. The method comprises the following steps: selecting FTO (Fluorinedoped Tin Oxide) conductive glass as a base, preparing a perovskite-structure bismuth vanadate/bismuth ferrite heterojunction film with a chemical solution deposition method, and then preparing a top electrode on the film with a physical sputtering method to obtain the solar cells. The photovoltaic effect of the bismuth vanadate film can be increased and is reversed by utilizing an ultra-thin bismuth ferrite layer. The method can prepare the bismuth vanadate/bismuth ferrite heterojunction film with high consistency and good repeatability on the glass substrate with a low cost. The prepared heterojunction film has good photovoltaic properties, the diode direction of the heterojunction film is opposite to the diode direction of a pure bismuth vanadate film, and ultra-thin bismuth ferrite ferroelectric films and similar bismuth vanadate/bismuth ferrite heterojunction films have a wide application prospect in the fields of solar cells and photoelectric devices due to the good properties.
priorityDate 2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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