http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103077963-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2013-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103077963-B |
| titleOfInvention | A kind of Ohm contact electrode, its preparation method and comprise the semiconductor element of this Ohm contact electrode |
| abstract | The invention discloses a kind of semiconductor element being placed in the suprabasil Ohm contact electrode of N-shaped wide band gap semiconducter, its preparation method and comprising this Ohm contact electrode.This Ohm contact electrode comprises and is placed in the suprabasil metal electrode layer of N-shaped wide band gap semiconducter, first electrode layer of described metal electrode layer is Ti metal level, the second electrode lay is Ni metal level, and third electrode layer is Ti metal level, and the 4th electrode layer is thermal inertia metal level.Its preparation method is included in N-shaped wide band gap semiconducter substrate surface and prepares electrode pattern, then adopts Vacuum Heat electron beam evaporation or sputtering method depositing Ti metal, Ni metal, Ti metal and thermal inertia metal level successively in substrate.The present invention can provide the Ohm contact electrode substrate of N-shaped wide band gap semiconducter with lower contact resistance, thermal stability and hot-leveling, and has the semiconductor element of this Ohm contact electrode. |
| priorityDate | 2013-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.