http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103064222-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 |
| filingDate | 2008-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103064222-B |
| titleOfInvention | Liquid crystal indicator |
| abstract | It is an object of the invention to provide the liquid crystal indicator with the thin film transistor (TFT) that electrical characteristics are high and reliability is high.In the liquid crystal indicator of reciprocal cross shift thin film transistor (TFT) with channel cutoff type, the reciprocal cross shift thin film transistor (TFT) of this channel cutoff type includes: gate electrode；Gate insulating film on gate electrode；The microcrystalline semiconductor film including channel formation region on gate insulating film；Cushion on microcrystalline semiconductor film；Channel protective layer on the buffer layer is formed overlappingly with the channel formation region of microcrystalline semiconductor film. |
| priorityDate | 2007-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.