http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103058196-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B31-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-035 |
| filingDate | 2012-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103058196-B |
| titleOfInvention | Apparatus and method for deposit polycrystalline silicon |
| abstract | The present invention relates to the apparatus and method for deposit polycrystalline silicon.The present invention relates to a kind of device for polysilicon deposition, including：There is the reactor chamber of reactor wall, at least 20 silk rods in reactor chamber and the air inlet for reacting gas, wherein each rod arrives at 450mm distance 150 except the silk rod near reactor wall, has three other adjacent filaments rods and one to three adjacent air inlet.The invention further relates to a kind of in this device on silk rod deposit polycrystalline silicon method, wherein using air inlet, silicon-containing gas are incorporated in reactor chamber and the heater strip temperature that deposits thereon to silicon of rod. |
| priorityDate | 2011-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.