| abstract |
A kind of semiconductor device comprises: form passivation layer on a semiconductor substrate, the first protective layer, interconnection layer and the second protective layer successively.Interconnection layer has expose portion, and this expose portion is formed barrier layer and solder projection.At least one deck in passivation layer, the first protective layer, interconnection layer and the second protective layer comprises at least one channel member in the region be formed in outside conductive pad areas.The invention provides interconnection structure after passivation. |