http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103035485-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103035485-B |
| titleOfInvention | Manufacture method, Method of processing a substrate and the lining processor of semiconductor devices |
| abstract | The application relates to manufacture method, Method of processing a substrate and the lining processor of semiconductor devices. Improve the film thickness uniformity of the dielectric film of the laminated construction with oxide-film and nitride film etc. Be implemented as follows operation: implement the operation of supplying with the first unstrpped gas comprising of stipulated number and the circulation of supplying with the operation of oxidizing gas and reducing gas by the substrate that is heated to the first temperature in the container handling under being less than atmospheric pressure, on substrate, form thus the operation of oxide-film; By supplying with nitriding gas for the substrate that is heated to the temperature below above the second temperature of the first temperature in container handling, on the surface of oxide-film, form thus the operation of kind of crystal layer; By implement the operation of supplying with the second unstrpped gas comprising of stipulated number and the circulation of supplying with the operation of nitriding gas for the substrate that is heated to the second temperature in container handling, on the lip-deep kind of crystal layer that is formed on oxide-film, form thus the operation of nitride film. |
| priorityDate | 2011-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 73.